P-Si_(0.3)Ge_(0.7)and p-Si_(0.2)Ge_(0.8) MOSFETs of enhanced performance

摘要

Measurements of current drive in p-Si_(1-x)Ge_x MOSFETs, with x= 0.7 and 0.8, reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 μm. They also show a lower knee voltage in output Ⅰ-Ⅴ characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with Sb punch-through stopper.