A multi-stack insulator silicon-organic memory device with gold nanoparticles

摘要

We demonstrate a memory device using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing. The nanoparticles are deposited over a thin thermal silicon dioxide layer that insulates them from the device silicon channel. An organic insulator deposited by the Langmuir-Blodget technique at room temperature separates the aluminium gate electrode from the nanoparticles. The device exhibits significant threshold voltage shifts after application of low voltage pulses (< +-7 V) to the gate and has non-volatile retention time characteristics.