An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs

摘要

This paper presents a new model for the electron mobility degradation in MOSFETs due to Remote Coulomb Scattering. We improved previous theoretical treatments by including screening in polysilicon and removing the approximation of quantum limit transport. Our results demonstrate that the ingredients included in our model are of remarkable quantitative importance.