Sample Preparation Methodology for SIMS Analysis on Polar Pattern Failure

摘要

For advanced multilayered complementary metal oxide semiconductor (CMOS) devices, high contact resistance on bonding pads is one of the most common issues to cause device failure. The root cause of the high contact resistance is difficult to identify via traditional methods. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is effective and efficient approach to detect defects in the suspected layer. In this study, the effective delayer sample preparation processes were investigated for TOF-SIMS failure analysis (FA). The criteria for the device failure were also proposed.