Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Department of Electrical Engineering, Stanford University, CA 94305, USA;
Graphene; Molybdenum; Sulfur; Transistors; Two dimensional displays; Temperature measurement; Thermal conductivity;
机译:电子-声子耦合和电子迁移率的第一原理方法:在二维材料中的应用
机译:电子-声子耦合和电子迁移率的第一性原理方法:在二维材料中的应用
机译:非常规基底上的Ⅲ类氮化物纳米线:从材料到光电器件的应用
机译:2D材料的电子,声子和非传统应用
机译:设计2D功能材料用于未来的微电子应用=未来微电子应用的2D功能材料设计
机译:2D材料中电子温度和电子 - 声子耦合的相干调制
机译:电子 - 声子耦合和电子的第一性原理方法 移动性:2D材料的应用