Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
aluminium compounds; chemical vapour deposition; gallium compounds; high electron mobility transistors; III-V semiconductors; passivation; silicon compounds; wide band gap semiconductors;
机译:极低{V} _ {sf {{th}}}的AlGaN / GaN MIS-HEMT,具有原位预沉积等离子体氮化和LPCVD-Si3N4栅极绝缘体的磁滞和电流崩塌
机译:高能质子辐照对MgO和Sc_2O_3钝化AlGaN / GaN HEMT中DC特性和电流崩塌的影响
机译:厚LPCVD-生长的SiN
机译:通过快速开关电流 - DLTS和CC-DLTFS的LPCVD Si3N4电流塌陷机制的研究钝化AlGaN / GaN HEMTS
机译:为改善AlGaN / GaN MOS-HFET中的阈值电压稳定性和电流崩塌抑制而研究ALD介电材料的研究。
机译:二维电子气上的供体样表面陷阱以及AlGaN / GaN HEMT的电流崩塌
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制