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A 100nW 6PPM/°C voltage reference with all MOS transistors

机译:所有MOS晶体管均具有100nW 6PPM /°C的电压基准

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The paper presents a low-voltage low-power CMOS subthreshold voltage reference with no resistors and bipolar junction transistors applied in a wide temperature range. A GGNMOS transistor is used to fine-tune of its curvature compensation in high temperature. The temperature coefficient (TC) is lower than 6ppm/0C in a temperature changed from -40°C to 125°C with different corners. The supply voltage ranges from 0.65V to 2.5V, and the power consumption is 100nW with 1V supply voltage. The power supply rejection ratio (PSRR) without any filter capacitor at 100Hz is lower than -46dB.
机译:本文提出了一种低电压,低功率CMOS亚阈值电压基准,在宽温度范围内都没有使用电阻器和双极结型晶体管。 GGNMOS晶体管用于微调高温下的曲率补偿。当温度从-40°C变为125°C且拐角不同时,温度系数(TC)低于6ppm / 0C。电源电压范围为0.65V至2.5V,电源电压为1V时功耗为100nW。在100Hz时没有任何滤波电容器的电源抑制比(PSRR)低于-46dB。

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