3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.