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Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers

机译:绝缘层上锡含量高的SiSn多晶的低温生长

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摘要

Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.
机译:多晶硅层和多晶硅层之间的比较研究表明,掺入锡对降低结晶温度是有效的。此外,我们发现在150°C的低温生长条件下,可以在SiO2上形成取代Sn含量约为30%的SiSn多晶,这有望作为直接过渡半导体。

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