III/V on large diameter silicon substrates using LPCVD germanium templates

摘要

We describe the use of LPCVD grown Ge layers on off-axis silicon wafers (200mm) as suitable templates for growth of subsequent III/V layers using solid source molecular beam epitaxy (MBE). A reproducible process for direct III–V semiconductor growth on Ge-coated Si substrates [1,2] has been developed using both single-wafer R&D MBE systems (Veeco GEN-III model) and multi-wafer production tools (Oxford V-100). Epitaxial growths have included GaAs- and InP-based structures. The structural properties of the III–V epilayers have been evaluated using optical microscopy, AFM, and (004) high-resolution x-ray diffraction (HRXRD).