RP-CVD growth of high carbon content Si1#x2212;xCx epilayers using disilane and trimethylsilane precursors

摘要

In summary, we have demonstrated Si1−xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.