Formation of vertically stacked germanium-tin (Ge1#x2212;xSnx) nanowires using a selective dry etch technique

机译：使用选择性干法蚀刻技术形成垂直堆叠的锗锡（Ge 1-x Sn x ）纳米线

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Vertically stacked (×3 wires stacked) Ge0.92Sn0.08 NWs were realized for the first time. This structure could be used for the fabrication of high performance Ge1−xSnx GAANW MOSFETs.

机译：首次实现了垂直堆叠（堆叠3根线）Ge0.92Sn0.08 NW。该结构可用于制造高性能Ge1-xSnx GAANW MOSFET。

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来源
《2014 7th International Silicon‐Germanium Technology and Device Meeting》|2014年|167-168|共2页
会议地点 Singapore(SG)
作者
Xu Xin; Lei Dian; Wang Wei; Dong Yuan; Gong Xiao; Yeo Yee-Chia;
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Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore;

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机译：使用选择性干蚀刻技术形成垂直堆叠锗 - 锡（GE 1＆＃X2212; X / ING> SN x ）纳米线
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Formation of vertically stacked germanium-tin (Ge1#x2212;xSnx) nanowires using a selective dry etch technique

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