Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate

机译：Ge（001）衬底上Ge 0.83 Sn 0.17 外延膜的受控退火过程中，应变引起的锡线形态不稳定性和锡线的自组装

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Formation of Sn wires on Ge0.83Sn0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.

机译：发现退火期间在Ge0.83Sn0.17层上形成了锡线。观察到的现象可以通过表面起伏，锡偏析和聚集来解释。

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来源
《2014 7th International Silicon‐Germanium Technology and Device Meeting》|2014年|45-46|共2页
会议地点 Singapore(SG)
作者
Lingzi Li; Wei Wang; Eng Soon Tok; Yeo Yee-Chia;
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Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

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Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate

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