High electron mobility n-channel Ge MOSFETs with sub-nm EOT

摘要

Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.