Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

机译：原位低温Si 2 H 6 表面钝化的应变Ge 0.96 Sn 0.04 P沟道MOSFET

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm−2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.

机译：我们使用原位低温Si2H6钝化模块开发了用于GeSn pMOSFET制造的工艺流程。制作了高性能的Ge0.96Sn0.04 pMOSFET。与Ge控件相比，在Ge0.96Sn0.04 pMOSFET中，在6×1012 cm-2的Qmv下，μeff的提高了24％。

著录项

来源
《2014 7th International Silicon‐Germanium Technology and Device Meeting》|2014年|107-108|共2页
会议地点 Singapore(SG)
作者
Liu Yan; Yan Jing; Han Genquan; Wang Hongjuan; Liu Mingshan; Zhang Chunfu; Cheng Buwen; Hao Yue;
展开▼
作者单位

Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, China;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008,第004期
2. The inf luence of soil drying- and tillage-induced penetration resistance on maize root growth in a clayey soil [J] . LIN Li-rong, HE Yang-bo, CHEN Jia-zhou 农业科学学报：英文版 . 2016,第005期
3. Inf luence of Spirulina platensis exudates on the endocrine and nervous systems of a mammalian model [J] . Samah, Mamdouh, Mohamed, 亚太热带生物医学杂志：英文版 . 2015,第006期
4. 0.8Ce 0.2(Fe 0.95Co 0.05) 11.8Si 1.2/Sn 42Bi 58 magnetocaloric composites prepared by low temperature hot pressing]]> [J] . X.T. Dong, X.C. Zhong, D.R. Peng, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2018,第期

机译：<！ Place =“Post”> 0.05> 0.05 ） 11.8 和<什么：INF PLACE =“POST”> 1.2 / SN 42> 42 BI 58 通过低温热压制备的磁阻器复合材料]]]>
5. 0.4Bi1.6O3 thin films in situ crystallized at low temperature onto the Gd0.1Ce0.9O1.95 bulk electrolytes via Facing-Target Sputtering]]> [J] . Ji-Na Jeung, Ji-Ho Eom, Byeong-Ju Park, JPC Bulletin on Iron & Steel . 2017,第5期

机译：<！[CDATA [ER 0.4 BI 1.6 O 3 薄膜原位在低温下在GD 0.1 是什么<什么：INF PLACE =“POST”> 0.9 O 1.95 通过面向目标溅射的散装电解质]]>
6. xN y and SiO 2 dielectric layers and rear surface passivation by using SiO 2/SiO xN y stack layers with screen printed local Al-BSF for c-Si solar cells]]> [J] . Nagarajan Balaji, Huong Thi Thanh Nguyen, Cheolmin Park, Current applied physics: the official journal of the Korean Physical Society . 2018,第1期

机译：<！[CDATA [SIO x n Y 和SIO 2 介电层和后表面钝化使用SIO 2 / SIO X N Y 堆叠图层，带有C-Si太阳能电池的屏幕印刷本地AL-BSF]]>
7. Strained Geinf0.96/infSninf0.04/inf P-channel MOSFETs with in situ low temperature Siinf2/infHinf6/inf surface passivation [C] . Liu Yan, Yan Jing, Han Genquan, International Silicon‐Germanium Technology and Device Meeting . 2014

机译：具有原位低温Si 2 H 6 H 6 P沟道MOSFET的CLIRATE GE 0.96 SN 0.04 P沟道MOSFET，表面钝化
8. Integrative nuclear FGFR1 signaling (INFS) - A common mechanism for ontogenic gene regulation by retinoid and orphan nuclear receptors. [D] . Lee, Yu-Wei. 2013

机译：整合核FGFR1信号传导（INFS）-类视黄醇和孤儿核受体对个体基因调控的常见机制。
9. Photodissimilation of Fructose to H(inf2) and CO(inf2) by a Dinitrogen-Fixing Cyanobacterium Anabaena variabilis [O] . P. M. Reddy, H. Spiller, S. L. Albrecht, 1996

机译：固定氮的蓝细菌鱼腥藻将果糖光异化为H（inf2）和CO（inf2）
10. Physical Properties of Ba(Ti$inf$0.96$/inf$Sn$inf$0.04$/inf$)O$inf$3$/inf$ Ceramics [O] . WU Yan-Qing, ZHANG Jia-Liang, LIU Da-Kang, 2016

机译：BA的物理性质（TI $ LT; INF $ GT; 0.96 $ LT; / INF $ GT; SN $ LT; INF $ GT; 0.04 $ LT; / INF $ GT;）O $ LT; INF $ GT; 3 $ / inf $ 陶瓷

Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

摘要

著录项

相似文献

相关主题

期刊订阅