Arsenic atomic layer doping in Si using AsH3

摘要

As dose as function of AsH3 exposure temperature is shown in Fig. 1. Temperature change after Si buffer deposition and AsH3 exposure are done in H2 or N2. For both cases the As incorporation is suppressed below 400°C. The incorporation behaviour is different from PH3 [3]. A possible explanation could be that limited hydrogen desorption from AsH3 molecule gas at lower temperature causes prevention of As adsorption. In the case of the sample of temperature change in H2, there is no or a very weak temperature dependence of the As dose at temperatures between 450°C to 700°C. By changing temperature in N2, slight increase of As dose is observed with increasing AsH3 exposure temperature from 450°C to 700°C.