Department of Materials Science and Engineering, USTC CAS Key Laboratory of Materials for Energy Conversion Hefei, Anhui, China;
Department of Materials Science and Engineering, USTC CAS Key Laboratory of Materials for Energy Conversion Hefei, Anhui, China;
Department of Materials Science and Engineering, USTC CAS Key Laboratory of Materials for Energy Conversion Hefei, Anhui, China;
AZO; buffer layer; RF magnetron sputtering; room temperature;
机译:Zn缓冲层在RF磁控溅射沉积Zn缓冲层上ZnO膜的结构和光致发光特性中的作用
机译:ZnO缓冲层对射频磁控溅射在PET衬底上掺杂Ga的ZnO薄膜中光电性能的影响
机译:射频磁控溅射沉积Zn缓冲层上ZnO薄膜的结晶度和光致发光特性
机译:射率磁控溅射沉积的Al掺杂ZnO膜的不同缓冲层的影响
机译:溅射参数对RF磁控溅射沉积ITO膜的影响
机译:氧浓度对超薄射频磁控溅射沉积铟锡氧化物薄膜作为光伏器件上电极的性能的影响
机译:通过RF磁控溅射在Si基板上生长的ZnO缓冲层气体气氛的影响