Electrical characteristics of novel ESD protection devices for I/O clamp

摘要

This paper presents a novel silicon controlled rectifier (SCR)-based ESD protection devices for I/O clamp. The proposed ESD protection devices has a low trigger voltage and high holding voltage characteristics than conventional SCR. The proposed devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) technology. From the experimental results, the device (PTSCR) for I/O clamp has a trigger voltage of 6.5V, 7.7V and 8.1V with the LG1 of 0.5um, 0.8um and 1um, respectively. The proposed ESD protection device (MPTSCR) has a lower trigger voltage of 5.6V. Also, the robustness has measured to human body model (HBM) 7kV and machine model (MM) 400V.