High frequency hydrogen-terminated diamond field effect transistor technology

摘要

We report on the fabrication and characterization of 120 nm and 50nm gate length hydrogen-terminated diamond field effect transistors. DC operation and performance Reduction of gate length from 120 nm to 50 nm is found to increase the extrinsic cut-off frequency (fT) from 43 GHz to 53 GHz. We believe this to be the highest cut-off frequency yet reported for a diamond based transistor.