Simulation of nanoscale dual-channel strained Si/Strained Si1#x2212;yGey/Relaxed Si1#x2212;xGex PMOSFET

摘要

In this paper, the effects of several parameters on the threshold voltage of nanoscale dual-channel strained Si/Strained Si1−yGey/relaxed Si1−xGex PMOSFET are investigated using SILVACO TCAD tools. The aspects discussed include strain induced at the channel, channel length, oxide thickness and substrate doping concentration. The electrical characteristics such as current-voltage relationship, subthreshold swing, drain induced barrier lowering and threshold voltage are investigated for 45nm channel length dual-channel strained Si/Strained Si1−yGey/relaxed Si1−xGex PMOSFET. The quantum mechanical effects that arise in sub-nanometer regime are explained in detail. The simulated results show good agreement with the developed analytical model with the incorporation of quantum mechanical effects, showing the accuracy of the obtained results.