The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon structure has good mechanical robustness, chemical stability, and compatibility with existing silicon technology. Therefore, it also has a wide area of potential applications such as waveguides, 1D photonic crystals, chemical sensors, biological sensor etc. Photoluminescences characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. The structure of porous silicon controlled by the parameters used during the experiment which know as experimental factor. These factors such as etching time, current density applied, temperature, doping concentration etc play an important role during the formation of porous. It will effect either to the thickness or porosity of sample. In this work, we select one of that factor to corellate which optical properties of porous silicon. We investigated the surface morphology by using Atomic Force Microscope (AFM) and photoluminescences using Photoluminescences (PL) spectrometer.
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