InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

摘要

Mid-infrared InAs QDs grown on In_xGa_(1-x)As/InP matrix by low pressure metal organic chemical vapor deposition have been studied. Formation of the InAs QDs with different growth conditions has been investigated. It has been found morphology of the InAs QDs on such In_xGa_(1-x)As/InP matrix is very sensitive to the growth conditions. InAs QDs with density of 1.3x10~(10) cm~(-2) were grown by using S-K growth method. To improve the dot size uniformity, a two-step growth method has been used. Using the two-step growth method, the InAs QDs size uniformity has been improved by 63% and 110%, respectively, when compared that of the dots grown by ordinary S-K method and ALE method. FWHM of the PL curve at 77K of the QDs grown by using the two-step growth method was measured of 26 meV and the peak emission wavelength was at > 2.3μm.