Multiple Wafer Bonding Offers Increased Throughput of High Brightness LEDs

摘要

This report describes an economical tool for the simultaneous bonding of multiple wafer pairs for increasing the manufacturing throughput of high-brightness light emitting diodes (HB LEDs). Up to an 8-fold increase in throughput can be realized with minimal investment since the process is performed with one tool. This article addresses the advantages and technical limitations of this method that should be considered upon implementation. The two most common metal-to-metal wafer bonding techniques for HB LEDs are reviewed. A detailed description of the bonding apparatus and its operation will be given. We also discuss process considerations that affect bond quality and uniformity.