A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET

摘要

In order to build an analytical model of an undoped symmetric DG SOI MOSFET devices, an accurate but rather difficult method was used by S. Malobabic et.al. In that paper, the authors have used a complicated Lambert function for the potential calculation and smoothing parameters without physical meaning. Starting from their model, the purpose of this paper is to show an original, simple and efficient analytical method for the computation of electrostatic potentials of the silicon film of such MOSFET novel device as a function of the gate to source voltage. Then, the total channel carrier charge will be computed from the silicon surface potential solution. Results from our proposed model will be compared to those obtained in the literature.