首页> 外文会议>2003 TMS Annual Meeting, Mar 2-6, 2003, San Diego, California >GRAIN SIZE HARDENING AND SOFTENING IN TUNGSTEN CARBIDE AT LOW HOMOLOGOUS TEMPERATURES
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GRAIN SIZE HARDENING AND SOFTENING IN TUNGSTEN CARBIDE AT LOW HOMOLOGOUS TEMPERATURES

机译:低温下碳化钨的晶粒尺寸硬化和软化

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Data in the literature on the effect of grain size d in the range from cm to nm on the flow stress of WC are evaluated, including nanocrystalline materials prepared by a special pulsed laser ablation method. Three grain size regimes were identified: (a) Regime I, d=10~(-2) to 0.5x 10~(-6) m, (b) Regime II, d=0.5xl0~(-6)-10~(-8) m and (c) Regime III, d<10~(-8) m. Grain size hardening occurred in Regimes I and II and softening in Regime III. Both straight and tangled dislocations were observed in Regime I. The major influence of grain size in Regime I could result from either its effect on the total dislocation density or the pile-up of dislocations. Insufficient data are available for Regime II to draw any positive conclusions regarding the governing mechanism. Analysis of the grain size softening in Regime III according to our grain boundary shear model yielded a reasonable activation volume, but a lower-than-expected activation energy. The lower energy could be due to the presence of the amorphous NiAl film at the grain boundaries, employed to obtain the nanocrystalline grain size.
机译:评价了从d到cm到nm的晶粒尺寸d对WC流动应力的影响的文献数据,包括通过特殊脉冲激光烧蚀方法制备的纳米晶体材料。确定了三种晶粒尺寸方案:(a)方案I,d = 10〜(-2)至0.5x 10〜(-6)m,(b)方案II,d = 0.5x10〜(-6)-10〜 (-8)m和(c)方案III,d <10〜(-8)m。区域I和区域II发生晶粒尺寸硬化,区域III发生晶粒尺寸硬化。在方案I中观察到了直线和缠结的位错。在方案I中晶粒尺寸的主要影响可能是由于其对总位错密度的影响或位错的堆积。政权II的数据不足,无法得出有关治理机制的任何积极结论。根据我们的晶界剪切模型对Regime III中的晶粒尺寸软化进行了分析,得出了合理的活化体积,但活化能低于预期。较低的能量可能是由于在晶界处存在无定形NiAl膜,用于获得纳米晶粒尺寸。

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