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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing >Effect of grain size from mm to nm on the flow stress and plastic deformation kinetics of Au at low homologous temperatures
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Effect of grain size from mm to nm on the flow stress and plastic deformation kinetics of Au at low homologous temperatures

机译:低同源温度下粒径从mm到nm对Au流动应力和塑性变形动力学的影响

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摘要

Three grain size regimes were identified: Regime I (d>~0.5 mu m), Regime II (d approx =10-500 nm) and Regime III (d<~10nm). Grain size hardening in accord with the Hall-Petch (H-P) equation occurred in Regimes I and II, grain size softening with the flow stress proportional to d~1 occurred in III. The rate-controlling mechanism in Regime I was concluded to be the intersection of dislocations, that in II grain boundary shear promoted by the pile-up of dislocations and that in III grain boundary shear without pile-ups. The transition from I to II occurred when the dislocation cell size became larger than the grain size, that from II to III when the dislocation elastic interaction spacing became larger than the grain size. The H-P behavior in Regime I is in accord with the dislocation density model, that in II with the dislocation pile-up model. The general behavior of Au is similar to that reported previously for Cu and Ag.
机译:确定了三种晶粒尺寸方案:方案I(d>〜0.5μm),方案II(d大约= 10-500 nm)和方案III(d <〜10nm)。在区域I和区域II中发生了符合霍尔-佩奇(H-P)方程的晶粒尺寸硬化,在区域III中发生了与d〜1成比例的流动应力导致晶粒尺寸软化。结论是,第一区的速率控制机制是位错的交叉点,第二级的晶界剪切是由位错的堆积促进的,而第三级的晶界剪切是没有位错的。当位错晶胞尺寸变得大于晶粒尺寸时,发生从I到II的转变;当位错弹性相互作用间距变得大于晶粒尺寸时,发生从I到II的转变。 I型区的H-P行为符合位错密度模型,II型区的H-P行为符合位错堆积模型。 Au的一般行为与先前报道的Cu和Ag相似。

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