首页> 外文会议>2003 TMS Annual Meeting, Mar 2-6, 2003, San Diego, California >EXAMINATION OF DEFORMATION DEFECTS IN BULK CRYSTALS USING ELECTRON CHANNELING CONTRAST IMAGING
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EXAMINATION OF DEFORMATION DEFECTS IN BULK CRYSTALS USING ELECTRON CHANNELING CONTRAST IMAGING

机译:电子通道对比成像检查大体积晶体的变形缺陷

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The crystallographic characterization of dislocations and deformation twins associated with plastic deformation is commonly carried out by thin foil examination in transmission electron microscopy (TEM) using diffraction contrast analysis. However, the thin foil approach has some limitations including difficulties in sample preparation, relatively small viewable areas, artifacts associated with thin foils, and difficulties in carrying out in-situ studies. As an alternative approach, electron channeling contrast imaging (ECCI) offers the ability to image and characterize crystallographic defects in the near surface region of bulk specimens by using a field emission gun scanning electron microscope (FEG-SEM). In this method, selected area channeling patterns (SACPs) are used to set up imaging conditions in a manner analogous to using selected area diffraction patterns in TEM. This paper reviews the electron channeling phenomena and image formation in ECCI, and outlines the experimental parameters necessary to image dislocations and microtwins. A number of examples are presented that illustrate the capabilities and advantages of using ECCI for defect imaging and analysis.
机译:与塑性变形有关的位错和变形孪晶的晶体学表征通常是通过透射电子显微镜(TEM)中的薄箔检查,使用衍射对比分析来进行的。但是,薄箔方法存在一些局限性,包括样品制备困难,可见区域相对较小,与薄箔相关的伪影以及进行原位研究困难。作为一种替代方法,电子通道对比成像(ECCI)通过使用场发射枪扫描电子显微镜(FEG-SEM)提供了成像和表征大块试样近表面区域中的晶体缺陷的能力。在此方法中,所选区域通道图形(SACP)用于以与在TEM中使用所选区域衍射图形类似的方式设置成像条件。本文回顾了ECCI中的电子通道现象和图像形成,并概述了图像位错和微孪晶所必需的实验参数。提供了许多示例,这些示例说明了使用ECCI进行缺陷成像和分析的功能和优点。

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