A 22 Percent C.W. Efficiency Solid State Microwave Oscillator

摘要

Operation of GaAs Schottky-barrier IMPATT diodes is reported. We describe the technology, the electrical characterization and the microwave coaxial measurements. Efficiencies of 22% at 6.5 GHz and 18.5% at 12 GHz were obtained. Computer calculations indicate that the efficiency of these devices may be considerably higher.