Annealing Effects on the Transparent Zinc Tin Oxide Thin Film Transistor and Circuit Applications

摘要

We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.