Study of the relationship between SiH rotational temperature and film crystallinity deposited by SiH_4-H_2 plasma

摘要

Relationship between rotational temperature obtained from SiH molecular emission spectrum and film crystallinity was studied in various plasma operation conditions. As increasing input power and H_2/SiH_4 gas ratio, both the rotational temperature and crystallinity were increased. On the other hand, the correlation between the rotational temperature and crystallinity was not observed with respect to gas pressure variation. Based on the result, the measurement of rotational temperature would be used as one of the in-situ indication method for film crystallinity during silicon thin film deposition in certain conditions.