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首页> 外文期刊>Nature Chemistry >Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates
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Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

机译:在二维半导体纳米板的选择性面上受控生长高密度CdS和CdSe纳米棒阵列

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摘要

The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures.
机译:合理合成具有特定组成,形态和功能性的三维三维纳米结构,对于从能量转换,电子学到生物技术的各个领域的应用至关重要。在这里,我们报告了一种用于三种类型的分层一维(1D)/二维(2D)纳米结构的受控外延生长的种子生长方法,其中II-VI半导体CdS或CdSe的纳米棒阵列生长在选择性小平面上在纳米板的两个基面上,或在一个基面上,或在两个基面和六个侧面上的六边形纳米板。 2D六边形纳米板的种子工程是导致三种类型的1D / 2D纳米结构生长的关键因素。半导体的纤锌矿型和锌混合型多晶型物用于确定一维纳米棒阵列的刻面选择性外延生长,从而导致形成不同的分层三维(3D)纳米结构。

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