SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SIC INGOT PRODUCED BY GROWING SAID SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND SIC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SIC WAFER AND SAID SIC WAFER WITH EPITAXIAL FILM

摘要

An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.