MEMRISTOR DEVICE, METHOD OF MANUFACTURING THE MEMRISTOR DEVICE, AND MEMORY DEVICE HAVING THE MEMRISTOR DEVICE

摘要

A memristor device is disclosed. The memristor element includes a first electrode and a second electrode disposed to face each other; and a resistance change layer disposed between the first electrode and the second electrode and formed of an organic-inorganic halogen compound having a layered structure represented by Chemical Formula 1. Such a memristor device can implement performance such as a low driving voltage, a high on/off ratio, and long durability.