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MARK TO BE PROJECTED ON AN OBJECT DURIGN A LITHOGRAHPIC PROCESS AND METHOD FOR DESIGNING A MARK

机译:在岩画过程中投影在物体上的标记和设计标记的方法

摘要

The first layer mark and the second layer mark are adapted to be projected onto each other during the lithographic process. The first layer components and the second layer components are adapted to be arranged in a plurality of different overlay configurations, each overlay configuration comprising a number of the plurality of the first layer components and a number of the plurality of the second layer components, and each overlay configuration having a different overlay distance at which each first layer component is arranged in a first direction of an associated second layer component of the second layer components. The method comprises determining an overlay step which represents a difference between the different overlay distances of the plurality of overlay configurations, determining a largest overlay distance, determining the number of first layer components and/or the number of associated second layer components in each overlay configuration.
机译:第一层标记和第二层标记适于在光刻过程中相互投影。第一层组件和第二层组件适于以多个不同的叠加配置布置,每个叠加配置包括多个第一层组件和多个第二层组件,以及具有不同叠加距离的每个叠加配置,其中每个第一层组件在第二层组件的相关联的第二层组件的第一方向上排列。该方法包括确定表示多个覆盖配置的不同覆盖距离之间的差异的覆盖步骤、确定最大覆盖距离、确定每个覆盖配置中第一层组件的数量和/或相关联的第二层组件的数量。

著录项

  • 公开/公告号EP3971648A1

    专利类型

  • 公开/公告日2022-03-23

    原文格式PDF

  • 申请/专利权人 ASML NETHERLANDS B.V.;

    申请/专利号EP20200196782

  • 发明设计人 GAURY BENOIT HERVE;

    申请日2020-09-17

  • 分类号G03F7/20;H01L21/66;

  • 国家 EP

  • 入库时间 2022-08-25 00:02:09

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