INTEGRATED CURRENT DETECTOR FOR HEMT POWER TRANSISTOR in GaN

摘要

Current detection device of a power transistor (10), in particular of the GaN HEMT type, said detection device being capable of indicating when the detected current is positive and/or negative and comprising:- a circuit portion ( 20) current-voltage converter provided with a detection node (N1) coupled to said power transistor and configured to produce at said measurement node (N1) a potential (Vsense) for measuring an image of a fraction of said current delivered by said power transistor (10),- a first detection circuit (30) coupled to said detection node (N1), said at least detection circuit (30) with transistor(s) being provided with at least one amplification stage comprising at least one amplification transistor whose gate-source voltage depends on said measurement potential (Vsense), said detection circuit (30, 30', 50, 50', 70) being configured to produce at output a binary detection signal indicating of when said detected current reaches the said first given level of current. Figure for abstract: Figure 1.