Si100/Si111 Silicon Etchant Compositions exhibiting both low Si100/Si111 selectivity and low silicon dioxide etching rate

摘要

The present invention relates to a special silicon etching solution composition, which has a low selectivity (Si(100)/Si(111)) and a low silicon dioxide etching rate for two crystal lattice directions at the same time, and is used in a semiconductor process. The silicon etching solution composition is based on the total weight of the etching solution composition, about 0.5wt% to about 5wt% of one or more quaternary ammonium hydroxides, about 5wt% to 55wt% of one or more primary amine compounds, from about 15 wt % to 80 wt % of at least one polyhydric alcohol compound and from about 10 wt % to 35 wt % of an aqueous medium. The composition preferentially etches silicon present on the substrate rather than silicon dioxide.