Robust detection techniques for updating read voltages of memory devices

摘要

Disclosed are devices, systems and methods for improving the reliability of retrieving information from a memory device. An exemplary method includes obtaining a plurality of cell counts for each of a plurality of read voltages applied to the memory device, each of the plurality of cell counts representing a number of cells having a cell voltage value that is within a voltage band corresponding to the read voltage applied thereto, generating, based on the plurality of cell counts, the plurality of read voltages and a design parameter, a set of estimated parameters, the design parameter being based on one or more properties of the memory device, determining an updated read voltage based on the estimated set of parameters, and applying the updated read voltage to the memory device to retrieve the information from the memory device.