METHOD FOR CONNECTING COMPONENTS DURING MANUFACTURE OF POWER ELECTRONIC MODULES OR ASSEMBLIES VIA DIRECT BONDING OF SMOOTH METALLIC SURFACE LAYERS AS WELL AS CORRESPONDING POWER ELECTRONIC MODULE AND CORRESPONDING POWER ELECTRONIC ASSEMBLY

摘要

In the case of a process for the connection of components in the production of power-electronic modules or assemblies, surfaces of components (3, 4, 5, 9) to be connected shall be provided or fitted with a metallic surface layer (1) having a surface sufficiently smooth for direct bonding or smoothing;to obtain a surface sufficiently smooth for direct bonding.The surface layers (1) of the surfaces to be connected are then pressed against each other with a pressure of at least five MPas at increased temperature,so that they join together under the formation of a single layer (2).The process allows easy and fast connection even from larger contact surfaces that meet the high demands of power electronic modules.The components to be connected may be one or more semiconductor elements (4) and a substrate (3);two semiconductor devices (1) (e.g. two diodes (4) or two MOSFETs (4));one or more striped electrical connectors (5) and a semiconductor element (4) and a substrate (3);a semiconductor element (4) (MOSFET) and a capacitor (9);a capacitor (9) and a substrate (3).When a semiconductor element (4) is connected to a substrate (3), the surface layers (1) can be structured or already structured before the connection, so that after the connection, individual layers of the formed layer (2) are electrically isolated from each other by interfaces (7),and/or surface layers (1) may be structured or already structured prior to joining to form indentations, with an insulation material (6) inserted into one or more of the indentations of surface layers (1) prior to joining;which melts preferably during the production of the compound by the increased temperature, e.g. a glass material.When connecting several semiconductor elements (4) to a substrate (3), the semiconductor elements (4) may consist of different materials (an ultra-thin semiconductor element (4) of GaN and an ultra-thin semiconductor partelement (4) of SiC) or be equal to or differently arranged (a first MOSFET (4) with the active surface down and a second MOSFET (4) with the active surface down or up).For two adjacent to one substrate (3)homogeneous MOSFETs (4) can be applied another substrate (3) over the two MOSFETS (4).When stacking several MOSFETs (4), they are stacked together.The surfaces of the components to be connected (3, 4, 5, 9) may be provided or fitted with a surface layer (1) of Ag or Ag containing as the principal constituent metal material as the metallic surface layer (1).Other materials such as Cu, Au, Ti, Pt or Al can also be used for surface coatings (1).