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MONOLITHIC CHARGE COUPLED FIELD EFFECT RECTIFIER EMBEDDED IN A CHARGE COUPLED FIELD EFFECT TRANSISTOR

机译:单片电荷耦合场效应整流器嵌入电荷耦合场效应晶体管中

摘要

An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop VfD2 of the monolithic diode device is less than a forward voltage drop VfD1 of the body diode of the MOSFET device. The forward voltage drop VfD2 is process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop VfD2 advantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.
机译:集成电路包括MOSFET装置和单片二极管装置,其中整体二极管器件与MOSFET装置的主体二极管并联电连接。 单片二极管器件被配置成使得整体二极管器件的正向电压降Vfd2小于MOSFET装置的主体二极管的正向电压降Vfd1。 正向电压降Vfd2是通过控制栅极氧化物厚度,通道长度和主体掺杂浓度水平来调谐的过程。 正向电压降VFD2的可调性有利地允许设计集成电路以根据开关速度和效率的要求来满足各种应用。

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