MEMORY DEVICE FOR DETECT AND REFAIR BAD WORDLINE BY ITSELF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

The present technology relates to a memory device capable of detecting and repairing a bad word line by itself and a memory system including the memory device, a plurality of first word lines each including a plurality of first memory cells, and a plurality of second memory cells. A cell array including a plurality of second word lines each including memory cells, a fuse array for replacing a selected word line among the plurality of first word lines with a plurality of second word lines, and a plurality of first word lines a bad word line that determines a word line that satisfies the first condition as a bad word line during an access operation for The information storage unit for storing the address, the bad grade, and the number of accesses as judgment information for the bad word line, and the judgment information stored in the information storage part are analyzed, and a selected word line is selected from among the bad word lines according to the analysis result, and a rupture operation unit for rupturing the physical address of the selected word line to the fuse array.