A method for predicting thermal donor generation behavior of a silicon wafer, a method for evaluating a silicon wafer, and a method for manufacturing a silicon wafer

摘要

Provided are a method for predicting thermal donor generation behavior of a silicon wafer with high precision applicable to both short-time heat treatment and long-time heat treatment, a silicon wafer evaluation method using the predictive method, and a silicon wafer manufacturing method using the predictive method do. The method for predicting the thermal donor generation behavior of a silicon wafer of the present invention is a reaction rate equation based on both a bond dissociation model of oxygen clusters through diffusion of interstitial oxygen and a bond model of oxygen clusters through diffusion of oxygen dimers, A first step of setting an initial oxygen concentration condition before heat treatment on a silicon wafer, and a second step of calculating a generation rate of oxygen clusters generated when subjected to the heat treatment by using the reaction rate equation; and a third step of calculating a thermal donor generation rate generated when subjected to the heat treatment, based on the oxygen cluster formation rate.