ALD CVD ALD/CVD PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITIONALD CHEMICAL VAPOR DEPOSITIONCVDAND ALD/CVD DEPOSITION USING THE SAME

摘要

The present invention relates to a precursor compound, and more particularly, a metal of Group 13 on the periodic table that can be used for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD). It relates to a precursor compound and a method for manufacturing a thin film using the same.