DEFECT INSPECTION METHOD FOR SILICON WAFER AND DEFECT INSPECTION SYSTEM FOR SILICON WAFER

摘要

According to the present invention, when viewed in a side view, an angle θ1 formed by the optical axis of incident light with respect to a surface (or virtual plane) of a silicon wafer is 67º to 78º, and when θ2 is the angle formed by the detection optical axis of a photodetector with respect to the surface (or virtual plane) of the silicon wafer, θ1-θ2 is -6º to -1º, or 1º to 6º.