GATE-ALL-AROUND-INTEGRATED-SCHALTUNG STRUCTURES WITH ISOLATOR SUBSTRUMENT

摘要

Gate-All-Around integrated circuit structures that have an insulator substrate and processes for producing gate-all-Around integrated circuit structures that have an insulator substrate are described. For example, an integrated circuit structure includes a semiconductor fin on an insulator substrate. A vertical arrangement of horizontal nanowires is above the semiconductor fin. A gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires,and the gate stack overlaps a channel region of the semiconductor fins. A pair of epitactical source or drain structures is at the first and second ends of the vertical arrangement of horizontal nanowires and the semiconductor fin.