PHOTOELECTRIC CONVERSION LAYER, SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER SYSTEM

摘要

The photoelectric conversion layer of an embodiment is based on Cu₂O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.