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Apparatus for growing materials and method for growing materials using melting point depressing of nanoparticles

机译:使用熔点抑制纳米颗粒的生长材料的生产和方法

摘要

In the present invention, the present invention provides a nanoparticle supply unit capable of continuously supplying nanoparticles to a reactive growth unit, and a reaction for growing the nanoparticles supplied from the nanoparticle supply unit and projected onto the substrate using a melting point reduction phenomenon. It relates to a material growing apparatus and a material growing method including a growth unit and a temperature control unit for controlling the temperature of the substrate. According to the present invention, a material can be easily grown by projecting nanoparticles onto a single crystal substrate or a polycrystalline substrate, which is difficult to grow, using the phenomenon of lowering the melting point of the nanoparticles.
机译:在本发明中,本发明提供一种能够连续向反应性生长单元连续供应纳米颗粒的纳米颗粒供应单元,以及用于生长从纳米颗粒供应单元供应的纳米颗粒并使用熔点减少现象突出到基板上的反应。它涉及一种材料生长设备和包括用于控制基板温度的生长单元和温度控制单元的材料生长方法。根据本发明,可以通过将纳米颗粒突出到单晶基板或多晶衬底上,使用降低纳米颗粒的熔点的现象来容易地生长一种材料。

著录项

  • 公开/公告号KR20210053503A

    专利类型

  • 公开/公告日2021-05-12

    原文格式PDF

  • 申请/专利权人 조남태;

    申请/专利号KR1020190139177

  • 发明设计人 조남태;

    申请日2019-11-04

  • 分类号C30B11;C30B29/16;C30B29/36;C30B29/38;

  • 国家 KR

  • 入库时间 2022-08-24 18:48:00

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