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Embedded ferroelectric memory in high-k first technology
Embedded ferroelectric memory in high-k first technology
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机译:嵌入式铁电记忆在高k第一科技中
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摘要
In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit has a first doped region and a second doped region within a substrate. A FeRAM (ferroelectric random access memory) device is arranged over the substrate between the first doped region and the second doped region. The FeRAM device has a ferroelectric material and a conductive electrode. The ferroelectric material is arranged over the substrate and the conductive electrode is arranged over the ferroelectric material and between sidewalls of the ferroelectric material.
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