FIB-SEM 3D TOMOGRAPHY FOR MEASURING SHAPE DEVIATIONS OF HIGH ASPECT RATIO STRUCTURES

摘要

The present invention relates to a 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer. A 3D tomographic image is obtained and a plurality of 2D cross section image is selected. Contours of HAR structures are identified and deviation parameters are extracted. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.