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WRITE DISTURB REFRESH RATE REDUCTION USING WRITE HISTORY BUFFER

机译:使用写入历史缓冲区写入干扰刷新率减少

摘要

A write history buffer can prevent write disturb in memory, enabling a reduction in write disturb refresh rate and improvement in performance. A memory device can include circuitry to cause consecutive write commands to the same address to be spaced by an amount of time to reduce incidences of write disturb, and therefore reduce the required write disturb refresh rate and improve performance. In one example, a memory device receives multiple write commands to an address. In response to receipt of the multiple write commands, the first write command is sent to the memory and a timer is started. Subsequent write commands that are received after the first write command and before expiration of the timer are held in a buffer. After expiration of the timer, only the most recent of the subsequent write commands to the address is sent to the memory array. In this way, the subsequent write commands received during a time window after the first write command are coalesced and a single subsequent write command is sent to the memory.
机译:写入历史缓冲区可以防止在内存中进行写入干扰,从而可以减少写入打扰刷新率和性能的提高。存储器设备可以包括电路,以使连续写入命令与相同的地址相同的地址,以减少写入干扰的发生时间,因此减少所需的写入打扰刷新率并提高性能。在一个示例中,存储器设备接收到地址的多个写命令。响应于接收到多个写命令,第一个写命令被发送到内存,并启动计时器。后续写入命令在第一个写命令之后收到以及在计时器到期之前在缓冲区中保持。在计时器到期后,仅发送到地址的最新后续写入命令被发送到内存阵列。以这种方式,在第一个写命令被聚结之后的时间窗口期间接收的后续写命令,并且将单个后续写入命令发送到存储器。

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