HETEROSTRUCTURE LAMINATED THIN FILM, METHOD FOR PRODUCING HETEROSTRUCTURE LAMINATED THIN FILM AND SEMICONDUCTOR DEVICE COMPRISING HETEROSTRUCTURE LAMINATED THIN FILM

摘要

Embodiments of the present invention relate to a heterostructure laminated thin film, a method of manufacturing the same, and a semiconductor device. The laminated thin film having a heterostructure in which heterogeneous materials are laminated according to an embodiment of the present invention is a first transition of a monolayer including a compound of a first transition metal element and a first chalcogen element. A metal dichalcogenide layer; And a heterostructure including a first oxide layer disposed on the first transition metal dichalcogenide layer and including an oxide of the first transition metal element.